smd type ic smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source KDB7045L features 100 a, 30 v. r ds(on) = 0.0045 @v gs =10v r ds(on) = 0.006 @v gs =4.5v critical dc electrical parameters specified at elevated temperature rugged internal source-drain diode can eliminate the need for an external zener diode transient suppressor high performance trench technology for extremely low r ds(on) 175 maximum junction temperature rating absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gs 20 v 100 75 drain current pulsed 300 a power dissipation @ t c =25 p d 125 w derate above 25 p d 0.85 w/ operating and storage temperature t j ,t stg -65to175 thermal resistance junction to case r jc 1.2 /w thermal resistance junction to ambient r ja 62.5 /w i d drain current continuous a smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss v gs =0v,i d = 250 a 30 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 22 mv/ zero gate voltage drain current i dss v ds =24v,v gs =0v 1 a gate-body leakage, forward i gssf v gs =20v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds = 0 v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 11.5 3 v gate threshold voltage temperature coefficient i d = -250 a, referenced to 25 -5 mv/ v gs =10v,i d = 50 a 0.0039 0.0045 v gs =10v,i d =50a,t j = 125 0.0056 0.0070 v gs =4.5v,i d = 40 a 0.0048 0.0060 on-state drain current i d(on) v gs =10v,v ds =10v 50 a forward transconductance g fs v ds =5v,i d =50a 120 s input capacitance c iss 5400 pf output capacitance c oss 1170 pf reverse transfer capacitance c rss 530 pf turn-on delay time t d(on) 14 30 ns turn-on rise time tr 114 160 ns turn-off delay time t d(off) 105 150 ns turn-off fall time t f 115 160 ns total gate charge q g 50 70 nc gate-source charge q gs 16 nc gate-drain charge q gd 16 nc maximum continuous drain?source diode forward current * i s 75 a drain-source diode forward voltage v sd v gs =0v,i s = 50 a * 0.95 1.2 v * pulse test: pulse width 300 s, duty cycle 2.0% v ds =15v,i d =50a,v gs =5v* m v dd =15v,i d =50a,v gs =10v, r gen =10 ,r gs =10 * static drain-source on-resistance r ds(on) v ds =15v,v gs =0v,f=1.0mhz smd type ic smd type transistors KDB7045L smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com
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